View Rule
View EO 12866 Meetings | Printer-Friendly Version Download RIN Data in XML |
DOC/BIS | RIN: 0694-AH91 | Publication ID: Spring 2021 |
Title: Multi-Gate Field-Effect Transistors (FET) Technology | |
Abstract:
The Bureau of Industry and Security (BIS) controls the export, reexport, and transfer (in-country) of dual-use and less sensitive military items through the Export Administration Regulations (EAR), including the Commerce Control List (CCL). Certain technologies, however, may not yet be listed on the CCL because they are emerging technologies. One such technology is multi-gate Field-Effect Transistor (FET) technology, which could potentially allow the development of increasingly smaller microprocessor and memory architecture. Multi-gate (FET) technology includes Gate-All-Around Field-Effect Transistors (GAAFET), Multi-Bridge Channel FETs (MBCFET), nano-sheet FETs, nano-wire FETs, and surrounding-gate transistors (SGT). This rule adds controls for multi-gate FET technology to the CCL. |
|
Agency: Department of Commerce(DOC) | Priority: Other Significant |
RIN Status: Previously published in the Unified Agenda | Agenda Stage of Rulemaking: Final Rule Stage |
Major: No | Unfunded Mandates: No |
CFR Citation: 15 CFR 774 | |
Legal Authority: 50 U.S.C. 4801-4582 50 U.S.C. 4601 50 U.S.C. 1701 E.O. 13222 |
Legal Deadline:
None |
||||||
Timetable:
|
Regulatory Flexibility Analysis Required: No | Government Levels Affected: None |
Small Entities Affected: No | Federalism: No |
Included in the Regulatory Plan: No | |
International Impacts: This regulatory action will be likely to have international trade and investment effects, or otherwise be of international interest. | |
RIN Data Printed in the FR: No | |
Agency Contact: Sharron Cook Policy Analyst Department of Commerce Bureau of Industry and Security 2096/MS 2705, 14th Street and Pennsylvania Avenue NW, Washington, DC 20230 Phone:202 482-2440 Email: sharron.cook@bis.doc.gov |