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DOC/BIS RIN: 0694-AH91 Publication ID: Spring 2020 
Title: ●Multi-Gate Field-Effect Transistors (FET) Technology 
Abstract:

The Bureau of Industry and Security (BIS) controls the export, reexport, and transfer (in-country) of dual-use and less sensitive military items through the Export Administration Regulations (EAR), including the Commerce Control List (CCL). Certain technologies, however, may not yet be listed on the CCL because they are emerging technologies. One such technology is multi-gate Field-Effect Transistor (FET) technology, which could potentially allow the development of increasingly smaller microprocessor and memory architecture. Multi-gate (FET) technology includes Gate-All-Around Field-Effect Transistors (GAAFET), Multi-Bridge Channel FETs (MBCFET), nano-sheet FETs, nano-wire FETs, and surrounding-gate transistors (SGT). This rule adds controls for multi-gate FET technology to the CCL.

 
Agency: Department of Commerce(DOC)  Priority: Other Significant 
RIN Status: First time published in the Unified Agenda Agenda Stage of Rulemaking: Final Rule Stage 
Major: No  Unfunded Mandates: No 
EO 13771 Designation: Fully or Partially Exempt 
CFR Citation: 15 CFR 774   
Legal Authority: 50 U.S.C. 4801-4582    50 U.S.C. 4601    50 U.S.C. 1701    E.O. 13222   
Legal Deadline:  None
Timetable:
Action Date FR Cite
Interim Final Rule  08/00/2020 
Regulatory Flexibility Analysis Required: No  Government Levels Affected: None 
Small Entities Affected: No  Federalism: No 
Included in the Regulatory Plan: No 
International Impacts: This regulatory action will be likely to have international trade and investment effects, or otherwise be of international interest.
RIN Data Printed in the FR: No 
Agency Contact:
Sharron Cook
Policy Analyst
Department of Commerce
Bureau of Industry and Security
2096/MS 2705, 14th Street and Pennsylvania Avenue NW,
Washington, DC 20230
Phone:202 482-2440
Fax:202 482-3355
Email: sharron.cook@bis.doc.gov